Total-dose characterization of a high-performance radiation-hardened 1.0- mu m CMOS sea-of-gates technology

A radiation-hardened CMOS sea-of-gates technology with 1.0- mu m geometry is developed which is fully compatible with commercial technologies. Total-dose and postirradiation effects are investigated in detail on transistors and circuits designed on a 2K-gate test chip. The data show that this techno...

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Bibliographic Details
Published inIEEE transactions on nuclear science Vol. 37; no. 6; pp. 2089 - 2096
Main Authors Yoshii, I., Hama, K., Maeguchi, K., Takatsuka, S., Hatano, H.
Format Journal Article
LanguageEnglish
Published IEEE 01.12.1990
Subjects
Circuit optimization
Circuit testing
CMOS technology
Fabrication
Integrated circuit technology
Laboratories
Microelectronics
Routing
Semiconductor devices
Very large scale integration
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Summary:A radiation-hardened CMOS sea-of-gates technology with 1.0- mu m geometry is developed which is fully compatible with commercial technologies. Total-dose and postirradiation effects are investigated in detail on transistors and circuits designed on a 2K-gate test chip. The data show that this technology is radiation hardened up to a total dose of 1 Mrad(SiO/sub 2/) and may be functional at 10 Mrad(SiO/sub 2/). Moreover, using a simple analytic model for switching of CMOS circuits, it is shown that the changes in circuit performance are well correlated with those in transistor characteristics.< >
ISSN:0018-9499
1558-1578
DOI:10.1109/23.101232