A Meeting of Materials: Integrating Diverse Semiconductor Technologies for Improved Performance at Lower Cost

Using the DAHI approach and NGAS's DAHI foundry, we were able to successfully design and integrate three different semiconductor technologies (InP HBT, GaN HEMT, and Si CMOS) at the micron scale for enhanced RF performance. An InP HBT VCO and a GaN HEMT amplifier were integrated onto a common I...

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Bibliographic Details
Published inIEEE microwave magazine Vol. 18; no. 2; pp. 60 - 73
Main Authors Gutierrez-Aitken, Augusto, Wu, Bryan Yi-Cheng, Scott, Dennis, Sato, Ken, Poust, Benjamin, Watanabe, Monte, Monier, Cedric, Lin, Nancy, Xiang Zeng, Nakamura, Eric, Cheng, Peter, Kaneshiro, Eric, Chan, Wesley, Smorchkova, Ioulia, Thai, Khanh, Wang, Sujane, Slavin, David, Oki, Aaron, Kagiwada, Reynold
Format Magazine Article
LanguageEnglish
Published IEEE 01.03.2017
Subjects
Gallium nitride
HEMTs
Heterojunction bipolar transistors
III-V semiconductor materials
Indium phosphide
Metals
Substrates
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Summary:Using the DAHI approach and NGAS's DAHI foundry, we were able to successfully design and integrate three different semiconductor technologies (InP HBT, GaN HEMT, and Si CMOS) at the micron scale for enhanced RF performance. An InP HBT VCO and a GaN HEMT amplifier were integrated onto a common IBM 65-nm CMOS substrate to simultaneously achieve high efficiency, low phase noise, and high output power, with performance closely matched to design simulations. Spurred on by DARPA's DAHI challenge, Northrop Grumman has developed a working foundry capable of delivering heterogeneous integrated circuits to the microwave market.
ISSN:1527-3342
1557-9581
DOI:10.1109/MMM.2016.2635838