Invitation to the World of the Plasma for Light Sources 4.Light Source for 21st Century 4.1 EUV (Extreme Ultra-Violet) Light Source

EUV lithography with a 13.5nm EUV (Extreme ultra-violet) light source is the strongest candidate of the next generation lithography for LSI. EUV is obtained from a high temperature and high density plasma by DPP (Discharge Produce Plasma) and LPP (Laser Produced Plasma).

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Bibliographic Details
Published inJournal of Plasma and Fusion Research Vol. 81; no. 12; pp. 1007 - 1009
Main Author HOTTA, Kazuaki
Format Journal Article
LanguageEnglish
Published The Japan Society of Plasma Science and Nuclear Fusion Research 2005
Subjects
13.5 nm
debris
debris mitigation
DPP (Discharge Produce Plasma)
EUV (Extreme Ultra-Violet)
EUV lithography (EUVL)
LPP (Laser Produce Plasma)
Sn
Xe
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Summary:EUV lithography with a 13.5nm EUV (Extreme ultra-violet) light source is the strongest candidate of the next generation lithography for LSI. EUV is obtained from a high temperature and high density plasma by DPP (Discharge Produce Plasma) and LPP (Laser Produced Plasma).
ISSN:0918-7928
DOI:10.1585/jspf.81.1007