Study and modeling of the breakdown voltage in semi insulating GaAs P+N, PN+, P+N+ junctions diodes presenting deep centers traps

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Bibliographic Details
Published inSuperlattices and microstructures Vol. 72; pp. 352 - 369
Main Authors Resfa, A., Menezla, Brahimi R., Bougueneya, Mustapha
Format Journal Article
LanguageEnglish
Published 01.08.2014
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ISSN:0749-6036
DOI:10.1016/j.spmi.2014.05.007