A 2-18 GHz Dual-Mode GaN Power Amplifier Based on Distributed Structure
Based on 0.2-<inline-formula> <tex-math notation="LaTeX">\mu </tex-math></inline-formula> m GaN HEMT high-voltage process, a ultrawideband (UWB) dual-mode power amplifier (PA) was designed using the distributed structure. Different from distributed amplifiers in con...
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Published in | IEEE microwave and wireless technology letters (Print) Vol. 34; no. 6; pp. 651 - 654 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
Piscataway
IEEE
01.06.2024
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | Based on 0.2-<inline-formula> <tex-math notation="LaTeX">\mu </tex-math></inline-formula> m GaN HEMT high-voltage process, a ultrawideband (UWB) dual-mode power amplifier (PA) was designed using the distributed structure. Different from distributed amplifiers in conventional low-pass filtering networks, LC series resonant networks are used to regulate the filtering characteristics. The switching transistors are used in the design to convert the low-pass and bandpass characteristics of the gate artificial transmission line, so as to realize the conversion of 2-18 GHz continuous wave (CW) and 8-12-GHz pulse two working modes. When the drain voltage (<inline-formula> <tex-math notation="LaTeX">V_{\text {D}} </tex-math></inline-formula>) is 28 V, the amplifier can achieve 10-W CW power output at 2-18 GHz with power added efficiency (PAE) greater than 20%. When <inline-formula> <tex-math notation="LaTeX">V_{\text {D}} </tex-math></inline-formula> is 40 V, the pulse output of 20 W at 8-12 GHz can be achieved, and the peak PAE can reach 35%. The innovative method of switching transistor combined with LC resonant network rematches the PA to obtain high PAE in the desired BW under high-voltage operation. |
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ISSN: | 2771-957X 2771-9588 |
DOI: | 10.1109/LMWT.2024.3392153 |