Improvements in the Quasi-static Capacitance–Voltage Characterization of Semiconductor–Insulator Interface States (Si/SiO 2 )

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Bibliographic Details
Published inRussian microelectronics Vol. 33; no. 4; pp. 224 - 235
Main Authors Gulyaev, I. B., Zhdan, A. G., Kukharskaya, N. F., Tikhonov, R. D., Chucheva, G. V.
Format Journal Article
LanguageEnglish
Published 01.07.2004
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ISSN:1063-7397
DOI:10.1023/B:RUMI.0000033828.42915.b1