Stochastic Resonance in HfO₂-Based Memristors: Impact of External Noise on the Binary STDP Protocol
This article deals with the stochastic resonance (SR) phenomenon experimentally observed in HfO2-based memristors. The SR impact on the binary spike time-dependent plasticity (STDP) protocol at the device level was investigated. We demonstrate that the two extreme conductance states of the device th...
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Published in | IEEE transactions on electron devices Vol. 71; no. 9; pp. 5761 - 5766 |
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Main Authors | , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
New York
IEEE
01.09.2024
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | This article deals with the stochastic resonance (SR) phenomenon experimentally observed in HfO2-based memristors. The SR impact on the binary spike time-dependent plasticity (STDP) protocol at the device level was investigated. We demonstrate that the two extreme conductance states of the device that represent the synaptic weights in neuromorphic systems can be better distinguished with the incorporation of Gaussian noise into the bias signal. This technique allows setting the memristor conductance which is directly related to the overlap between the pre- and postsynaptic pulses. The study is reproduced in the LTSPICE simulator using the dynamic memdiode model (DMM) for memristors. |
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ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/TED.2024.3435173 |