Stochastic Resonance in HfO₂-Based Memristors: Impact of External Noise on the Binary STDP Protocol

This article deals with the stochastic resonance (SR) phenomenon experimentally observed in HfO2-based memristors. The SR impact on the binary spike time-dependent plasticity (STDP) protocol at the device level was investigated. We demonstrate that the two extreme conductance states of the device th...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 71; no. 9; pp. 5761 - 5766
Main Authors Salvador, E., Rodriguez, R., Miranda, E., Martin-Martinez, J., Rubio, A., Ntinas, V., Sirakoulis, G. Ch, Crespo-Yepes, A., Nafria, M.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.09.2024
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
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Summary:This article deals with the stochastic resonance (SR) phenomenon experimentally observed in HfO2-based memristors. The SR impact on the binary spike time-dependent plasticity (STDP) protocol at the device level was investigated. We demonstrate that the two extreme conductance states of the device that represent the synaptic weights in neuromorphic systems can be better distinguished with the incorporation of Gaussian noise into the bias signal. This technique allows setting the memristor conductance which is directly related to the overlap between the pre- and postsynaptic pulses. The study is reproduced in the LTSPICE simulator using the dynamic memdiode model (DMM) for memristors.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2024.3435173