Multilayer stacked crystalline silicon switch with nanosecond-order switching time
To realize compact and denser photonic integrated circuits, three-dimensional integration has been widely accepted and researched. In this article, we demonstrate the operation of a 3D integrated silicon photonic platform fabricated through wafer bonding. Benefiting from the wafer bonding process, t...
Saved in:
Published in | Optics letters Vol. 49; no. 15; p. 4294 |
---|---|
Main Authors | , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
United States
01.08.2024
|
Online Access | Get more information |
Cover
Loading…
Summary: | To realize compact and denser photonic integrated circuits, three-dimensional integration has been widely accepted and researched. In this article, we demonstrate the operation of a 3D integrated silicon photonic platform fabricated through wafer bonding. Benefiting from the wafer bonding process, the material of all layers is c-Si, which ensures that the mobility is high enough to achieve a nanosecond response via the p-i-n diode shifter. Optical components, including multimode interferences (MMIs), waveguide crossing, and Mach-Zehnder interferometer (MZI)-based switch, are fabricated in different layers and exhibit great performance. The interlayer coupler and crossing achieve a 0.98 dB coupling loss and <-43.58 dB cross talk, while the crossing fabricated in the same layer shows <-36.00 dB cross talk. A nanosecond-order switch response is measured in different layers. |
---|---|
ISSN: | 1539-4794 |
DOI: | 10.1364/OL.522137 |