Multilayer stacked crystalline silicon switch with nanosecond-order switching time

• Published in: Optics letters Vol. 49; no. 15; p. 4294
• Main Authors: Yin, Yuexin, Tang, Bo, Xu, Xinru, Ding, Yingzhi, Sun, Xiaoqiang, Wang, Xibin, Wang, Fei, Zhang, Peng, Zhang, Daming
• Format: Journal Article
• Language: English
• Published: United States 01.08.2024
• ISSN: 1539-4794
• DOI: 10.1364/OL.522137

To realize compact and denser photonic integrated circuits, three-dimensional integration has been widely accepted and researched. In this article, we demonstrate the operation of a 3D integrated silicon photonic platform fabricated through wafer bonding. Benefiting from the wafer bonding process, the material of all layers is c-Si, which ensures that the mobility is high enough to achieve a nanosecond response via the p-i-n diode shifter. Optical components, including multimode interferences (MMIs), waveguide crossing, and Mach-Zehnder interferometer (MZI)-based switch, are fabricated in different layers and exhibit great performance. The interlayer coupler and crossing achieve a 0.98 dB coupling loss and <-43.58 dB cross talk, while the crossing fabricated in the same layer shows <-36.00 dB cross talk. A nanosecond-order switch response is measured in different layers.