(Digital Presentation) High-Dose Ion-Implanted Photoresist Stripping Technology Employing High Temperature Single-Wafer SPM System

We found that the high-dose ion-implanted photoresist can be removed with high efficiency without residue by using SPM heated to 250 °C. We evaluated the reaction mechanism in detail, and proposed a model: a heat consumption by vaporization of H2O, a heat gain by decomposition of H2O2, and a charact...

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Bibliographic Details
Published inECS transactions Vol. 108; no. 4; pp. 185 - 195
Main Authors Sasahira, Konosuke, Nakamura, Satoshi, Hamada, Koichi, Jinbo, Sadayuki, Hattori, Kei
Format Journal Article
LanguageEnglish
Published The Electrochemical Society, Inc 20.05.2022
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Summary:We found that the high-dose ion-implanted photoresist can be removed with high efficiency without residue by using SPM heated to 250 °C. We evaluated the reaction mechanism in detail, and proposed a model: a heat consumption by vaporization of H2O, a heat gain by decomposition of H2O2, and a character change of SPM itself interact, the high-dose ion-implanted photoresist along with dopants is removed.
ISSN:1938-5862
1938-6737
DOI:10.1149/10804.0185ecst