Performance improvement in pentacene organic thin film transistors by inserting a C60 ultrathin layer

• Published in: Chinese physics B Vol. 20; no. 1; pp. 596 - 600
• Main Author: 孙钦军 徐征 赵谡玲 张福俊 高利岩
• Format: Journal Article
• Language: English
• Published: IOP Publishing 2011
• Subjects: C60; 场效应迁移率; 并五苯; 接触电阻; 有机薄膜晶体管; 薄膜电晶体; 超薄层
• ISSN: 1674-1056; 2058-3834
• DOI: 10.1088/1674-1056/20/1/017306

The contact effect on the performances of organic thin film transistors is studied here. A C60 ultrathin layer is inserted between Al source-drain electrode and pentacene to reduce the contact resistance. By a 3 nm C60 modification, the injection barrier is lowered and the contact resistance is reduced. Thus, the field-effect mobility increases from 0.12 to 0.52 cm2/（V.s）. It means that inserting a C60 ultra thin layer is a good method to improve the organic thin film transistor （OTFT） performance. The output curve is simulated by using a charge drift model. Considering the contact effect, the field effect mobility is improved to 1.15 cm2/（V-s）. It indicates that further reducing the contact resistance of OTFTs should be carried out.