Anneal Behavior of Total Ionizing Dose Irradiated UTBB FD-SOI n-MOSFETs Activated by Hot Carrier Stress

• Published in: IEEE transactions on nuclear science Vol. 70; no. 1; pp. 37 - 43
• Main Authors: Zheng, Qiwen, Cui, Jiangwei, Yu, Xuefeng, Li, Yudong, Guo, Qi
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.01.2023; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Annealing; Hot carrier stress; Hot carriers; Hot electrons; Human computer interaction; MOSFET circuits; MOSFETs; Silicon-on-insulator; silicon-on-insulator (SOI); SOI (semiconductors); Stress; Threshold voltage; total ionizing dose (TID)

In this article, anneal behavior of total ionizing dose (TID) irradiated ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI) n-MOSFETs activated by hot carrier stress is observed and discussed. Hot carrier experiments applied on TID irradiated and unirradiated devices s...