Anneal Behavior of Total Ionizing Dose Irradiated UTBB FD-SOI n-MOSFETs Activated by Hot Carrier Stress

In this article, anneal behavior of total ionizing dose (TID) irradiated ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI) n-MOSFETs activated by hot carrier stress is observed and discussed. Hot carrier experiments applied on TID irradiated and unirradiated devices s...

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Bibliographic Details
Published inIEEE transactions on nuclear science Vol. 70; no. 1; pp. 37 - 43
Main Authors Zheng, Qiwen, Cui, Jiangwei, Yu, Xuefeng, Li, Yudong, Guo, Qi
Format Journal Article
LanguageEnglish
Published New York IEEE 01.01.2023
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Annealing
Hot carrier stress
Hot carriers
Hot electrons
Human computer interaction
MOSFET circuits
MOSFETs
Silicon-on-insulator
silicon-on-insulator (SOI)
SOI (semiconductors)
Stress
Threshold voltage
total ionizing dose (TID)
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Summary:In this article, anneal behavior of total ionizing dose (TID) irradiated ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI) n-MOSFETs activated by hot carrier stress is observed and discussed. Hot carrier experiments applied on TID irradiated and unirradiated devices show that TID-induced positive oxide charges in buried oxide (BOX) can be neutralized by channel hot electrons, while no additional charged traps are generated. By considering the interactions of charged oxygen vacancies and channel hot electrons, the tunneling anneal process assisted by multiphonon emission is proposed.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2022.3229026