Electrically driven photon emission from individual atomic defects in monolayer WS 2

Electron-stimulated photon emission from individual point defects in monolayer WS 2 could be visualized with atomic resolution. Quantum dot–like single-photon sources in transition metal dichalcogenides (TMDs) exhibit appealing quantum optical properties but lack a well-defined atomic structure and...

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Bibliographic Details
Published inScience advances Vol. 6; no. 38
Main Authors Schuler, Bruno, Cochrane, Katherine A., Kastl, Christoph, Barnard, Edward S., Wong, Edward, Borys, Nicholas J., Schwartzberg, Adam M., Ogletree, D. Frank, de Abajo, F. Javier García, Weber-Bargioni, Alexander
Format Journal Article
LanguageEnglish
Published United States AAAS 18.09.2020
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Summary:Electron-stimulated photon emission from individual point defects in monolayer WS 2 could be visualized with atomic resolution. Quantum dot–like single-photon sources in transition metal dichalcogenides (TMDs) exhibit appealing quantum optical properties but lack a well-defined atomic structure and are subject to large spectral variability. Here, we demonstrate electrically stimulated photon emission from individual atomic defects in monolayer WS 2 and directly correlate the emission with the local atomic and electronic structure. Radiative transitions are locally excited by sequential inelastic electron tunneling from a metallic tip into selected discrete defect states in the WS 2 bandgap. Coupling to the optical far field is mediated by tip plasmons, which transduce the excess energy into a single photon. The applied tip-sample voltage determines the transition energy. Atomically resolved emission maps of individual point defects closely resemble electronic defect orbitals, the final states of the optical transitions. Inelastic charge carrier injection into localized defect states of two-dimensional materials provides a powerful platform for electrically driven, broadly tunable, atomic-scale single-photon sources.
Bibliography:USDOE Office of Science (SC)
European Research Council (ERC)
AC02-05CH11231; Early Career Award; P2SKP2171770; MAT2017-88492-R; SEV2015-0522; 789104-eNANO
Ministry of Economic Affairs and Digital Transformation of Spain (MINECO)
Swiss National Science Foundation (SNSF)
ISSN:2375-2548
2375-2548
DOI:10.1126/sciadv.abb5988