Asymmetric Carrier Conduction Mechanism by Tip Electric Field in \hbox Resistance Switching Device

Resistance random access memory (RRAM) is a great potential candidate for next-generation nonvolatile memory due to the outstanding memory characteristic. However, the resistance switching mechanism is still a riddle nowadays. In this letter, the switching mechanism is investigated by current-voltag...

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Bibliographic Details
Published inIEEE electron device letters Vol. 33; no. 3; pp. 342 - 344
Main Authors Yong-En Syu, Ting-Chang Chang, Tsung-Ming Tsai, Geng-Wei Chang, Kuan-Chang Chang, Jyun-Hao Lou, Ya-Hsiang Tai, Ming-Jinn Tsai, Ying-Lang Wang, Sze, S. M.
Format Journal Article
LanguageEnglish
Published IEEE 01.03.2012
Subjects
Educational institutions
Electrodes
Nonvolatile memory
Resistance
resistance switching
Sun
Switches
Tin
tip electric field
tungsten silicide (WSi)
Voltage measurement
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Summary:Resistance random access memory (RRAM) is a great potential candidate for next-generation nonvolatile memory due to the outstanding memory characteristic. However, the resistance switching mechanism is still a riddle nowadays. In this letter, the switching mechanism is investigated by current-voltage (I-V) curve fitting in the TiN/WSiO X /Pt RRAM device. The asymmetric phenomenon of the carrier conduction behavior is explained at the high-resistance state in high electric field. The switching behavior is regarded to tip electric field by localizing the filament between the interface of top electrode and insulator.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2011.2182600