Near infrared enhancement in CIGS-based solar cells utilizing a ZnO:H window layer

We investigated the near infrared enhancement in Cu(In,Ga)Se(2) (CIGS)- based solar cells utilizing a hydrogen-doping ZnO (ZnO:H) window layer. The results show that the carrier concentration of ZnO:H film is lower than that of AZO film which can increase the transmittance in the NIR. The advantage...

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Bibliographic Details
Published inOptics express Vol. 20 Suppl 6; no. S6; pp. A806 - A811
Main Authors Yeh, Chi-Li, Hsu, Hung-Ru, Chen, Sheng-Hui, Liu, Yung-Sheng
Format Journal Article
LanguageEnglish
Published United States 05.11.2012
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Summary:We investigated the near infrared enhancement in Cu(In,Ga)Se(2) (CIGS)- based solar cells utilizing a hydrogen-doping ZnO (ZnO:H) window layer. The results show that the carrier concentration of ZnO:H film is lower than that of AZO film which can increase the transmittance in the NIR. The advantage of ZnO:H film is higher Hall mobility than AZO film. Thus ZnO:H film has similar resistivity to AZO film. It was found that the cell efficiency was 12.4 and 13% for the AZO device and the ZnO:H device, respectively. The cell efficiency is enhanced by 4.8%. Furthermore, the results indicate that, the ZnO:H film is superior to the AZO film as the window layer for CIGS-based solar cells.
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ISSN:1094-4087
1094-4087
DOI:10.1364/OE.20.00A806