Power Performance of AlGaN/GaN High‐Electron‐Mobility Transistors with AlN Buffer on SiC Substrate at 3.5 GHz

Power Performance of AlGaN/GaN HEMTs In article number 2200826, Okhyun Nam and colleagues present the power performance of an AlGaN/GaN HEMT with AlN buffer on a 4‐inch SiC substrate, grown by high‐temperature metalorganic chemical vapor deposition. The fabricated devices were examined and showed po...

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Published inPhysica status solidi. A, Applications and materials science Vol. 220; no. 16
Main Authors Kim, Minho, Choi, Uiho, Kim, Keono, Heo, Yunseok, Lee, Kyeongjae, Lee, Sangmin, Nam, Okhyun
Format Journal Article
LanguageEnglish
Published 01.08.2023
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Summary:Power Performance of AlGaN/GaN HEMTs In article number 2200826, Okhyun Nam and colleagues present the power performance of an AlGaN/GaN HEMT with AlN buffer on a 4‐inch SiC substrate, grown by high‐temperature metalorganic chemical vapor deposition. The fabricated devices were examined and showed positive characteristics, such as low slump ratio and breakdown voltage. The results demonstrate the potential of using an AlN buffer HEMT in high‐power RF devices of the future.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.202370033