Thermal Immune NiGermanide for High Performance Ge MOSFETs on Ge-on- Si Substrate Utilizing \hbox\hbox Alloy

Highly thermally stable Ni germanide technology for high performance germanium metal-oxide-semiconductor field-effect transistors (Ge MOSFETs) is proposed, utilizing Pd incorporation into Ni germanide. The proposed Ni germanide shows not only the improvement of thermal stability but also the reducti...

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Published inIEEE transactions on electron devices Vol. 56; no. 2; pp. 348 - 353
Main Authors Ying-Ying Zhang, Jungwoo Oh, In-Shik Han, Zhun Zhong, Shi-Guang Li, Soon-Yen Jung, Kee-Young Park, Hong-Sik Shin, Won-Ho Choi, Hyuk-Min Kwon, Wei-Yip Loh, Majhi, P., Jammy, R., Hi-Deok Lee
Format Journal Article
LanguageEnglish
Published IEEE 01.02.2009
Subjects
Annealing
Germanium
Metals
MOSFETs
Ni alloys
Ni compounds
Nickel
Schottky barriers
Schottky diodes
Silicon
Thermal stability
Tin
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Summary:Highly thermally stable Ni germanide technology for high performance germanium metal-oxide-semiconductor field-effect transistors (Ge MOSFETs) is proposed, utilizing Pd incorporation into Ni germanide. The proposed Ni germanide shows not only the improvement of thermal stability but also the reduction of hole barrier height, which can improve the device on-current by reducing the Ni germanide to p+ source/drain contact resistance. The proposed Ni germanide showed a stable sheet resistance of up to 500 deg C 30-min postgermanidation annealing due to the suppression of agglomeration and oxidation of Ni germanide and the diffusion of Ni and Ge atoms by the incorporated Pd. Therefore, the proposed Ni 0.95 Pd 0.05 alloy could be promising for the high mobility Ge MOSFET applications.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2008.2010593