Active and buffer layers of GaN HEMT: ECV profiling and 2DEG calculation

Gallium nitride transistors with high electron mobility (HEMT) have been studied by means of electrochemical capacitance-voltage (ECV) technique. The capacitance-voltage characteristics at various frequencies were measured; the free charge carrier depth distributions as well as the intensity of quan...

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Bibliographic Details
Published inMaterials research innovations Vol. 24; no. 7; pp. 402 - 408
Main Authors Yakovlev, George, Zubkov, Vasily, Solomnikova, Anna
Format Journal Article
LanguageEnglish
Published Taylor & Francis 09.11.2020
Subjects
Electrochemical capacitance-voltage profiling
gallium nitride
HEMT
heterostructure
piezoelectric polarisation
quantum well
simulation
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Summary:Gallium nitride transistors with high electron mobility (HEMT) have been studied by means of electrochemical capacitance-voltage (ECV) technique. The capacitance-voltage characteristics at various frequencies were measured; the free charge carrier depth distributions as well as the intensity of quantum well filling by charge carriers were obtained. The features of 2D electron gas (2DEG) appearance in GaN HEMT, related to spontaneous and piezoelectric polarisation, as well as factors affecting the density of free charge carriers in channel and the performance of GaN HEMTs were described in detail. The efficiency of ECV technique for quality control of both active and buffer layers of GaN HEMT heterostructures is shown. The calculation of 2DEG density for various technological parameters of the interface, such as mutual orientation of AlGaN/GaN layers and composition of Al x Ga 1-x N, is carried out taking into account piezoelectric effects.
ISSN:1432-8917
1433-075X
DOI:10.1080/14328917.2019.1688559