Impact of Tungsten Doping on the Physicochemical Properties of Boron-Doped Diamond Electrodes
Boron-doped diamond (BDD) exhibits excellent physical and chemical characteristics particularly as electrode materials, making it a subject of extensive research. HFCVD is a crucial method for fabricating BDD electrodes, during which tungsten (W) impurities are inevitably incorporated. However, prev...
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Published in | Surfaces and interfaces Vol. 73; p. 107485 |
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Main Authors | , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
15.09.2025
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Subjects | |
Online Access | Get full text |
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Summary: | Boron-doped diamond (BDD) exhibits excellent physical and chemical characteristics particularly as electrode materials, making it a subject of extensive research. HFCVD is a crucial method for fabricating BDD electrodes, during which tungsten (W) impurities are inevitably incorporated. However, previous studies have overlooked the influence of W on BDD electrodes. To address this noteworthy gap, we prepared W co-doped BDD electrodes (WBDD) with varying W concentrations and evaluated their physical and electrochemical characteristics. Compared to BDD electrodes, W doping was found to restrain the electron transfer rate within the internal redox system ([Fe(CN)6]3-/4-), while strengthening the rate in the external redox system ([Ru(NH3)6]3+/2+). Based on surface characterization and electrochemical data, these distinct behaviors are likely explained by the modifications in surface properties and charge carrier density induced by W co-doping. Furthermore, we observed the photoluminescence emission peak of W in diamond for the first time and calculated the electronic structural characteristics of WBDD by first principles, elucidating the potential states of W within the diamond matrix. Overall, our study demonstrates that W impurities exert a significant influence on BDD electrodes, providing fresh perspectives for the design of advanced electrode materials and advancing the research on diamond color centers.
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ISSN: | 2468-0230 |
DOI: | 10.1016/j.surfin.2025.107485 |