Commercially Available N-polar GaN HEMT Epitaxy for RF Applications

Transphorm Inc. is supplying N-polar GaN epitaxial wafers for ultra-high-performance RF and mm-wave electronics on sapphire and silicon carbide (SiC) substrates. In this work, we report on the manufacturing facility, epitaxial growth on both 100-mm sapphire and 100-mm SiC, and device electrical perf...

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Bibliographic Details
Published in2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) pp. 250 - 254
Main Authors Bisi, Davide, Romanczyk, Brian, Liu, Xiang, Gupta, Geetak, Brown-Heft, Tobias, Birkhahn, Ron, Lal, Rakesh, Neufeld, Carl J., Keller, Stacia, Parikh, Primit, Mishra, Umesh K., McCarthy, Lee
Format Conference Proceeding
LanguageEnglish
Published IEEE 07.11.2021
Subjects
AFM
defects
Epitaxial growth
GaN
Hall
HEMT
HEMTs
manufacturing
mm-wave
mobility
N-polar
Performance evaluation
Production facilities
PulsedI-V
Radio frequency
Resistance
sapphire
sheet-resistance
SiC
Silicon carbide
TEM
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Summary:Transphorm Inc. is supplying N-polar GaN epitaxial wafers for ultra-high-performance RF and mm-wave electronics on sapphire and silicon carbide (SiC) substrates. In this work, we report on the manufacturing facility, epitaxial growth on both 100-mm sapphire and 100-mm SiC, and device electrical performance. Results show good material quality, a low 2DEG sheet resistance with good non-uniformity, and good dynamic behavior with no current dispersion at 60 V at both room temperature and high temperature (150°C).
DOI:10.1109/WiPDA49284.2021.9645102