Introducing Foundry-Compatible SiC and GaN Trench Processing Technologies for Reliable Automotive Application
In this paper we report the progress of our SiC trench etch development using enhanced ICP-based etch technology. Computer modelling of the electric field strength in the gate oxide as a function of corner geometry was used to illustrate trench corner rounding as an effective method to avoid to high...
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Published in | Materials science forum Vol. 1062; pp. 582 - 587 |
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Main Authors | , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Trans Tech Publications Ltd
31.05.2022
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Subjects | |
Online Access | Get full text |
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Summary: | In this paper we report the progress of our SiC trench etch development using enhanced ICP-based etch technology. Computer modelling of the electric field strength in the gate oxide as a function of corner geometry was used to illustrate trench corner rounding as an effective method to avoid to high gate oxide field strengths. This is an effort to examine a major ongoing issue in device reliability, and to govern future device design. |
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Bibliography: | Selected peer-reviewed extended papers abstracts of which were presented at the 13th European Conference on Silicon Carbide and Related Materials (ECSCRM 2020-2021), October 24-28, 2021, Tours, France |
ISSN: | 0255-5476 1662-9752 1662-9752 |
DOI: | 10.4028/p-xd84zm |