Introducing Foundry-Compatible SiC and GaN Trench Processing Technologies for Reliable Automotive Application

In this paper we report the progress of our SiC trench etch development using enhanced ICP-based etch technology. Computer modelling of the electric field strength in the gate oxide as a function of corner geometry was used to illustrate trench corner rounding as an effective method to avoid to high...

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Bibliographic Details
Published inMaterials science forum Vol. 1062; pp. 582 - 587
Main Authors Bolton, Chris, Guy, Owen, Jennings, Mike Robert, Monaghan, Finn, Ashraf, Huma, Evans, Jon, Mitchell, Jacob, Jones, Ben, Riddel, Kevin
Format Journal Article
LanguageEnglish
Published Trans Tech Publications Ltd 31.05.2022
Subjects
ICP Etch
Foundry-Compatible
Electric Vehicle
Trench Corner Rounding
Power Device
Reliable
Trench Device Simulation
Automotive
Trench Processing
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Summary:In this paper we report the progress of our SiC trench etch development using enhanced ICP-based etch technology. Computer modelling of the electric field strength in the gate oxide as a function of corner geometry was used to illustrate trench corner rounding as an effective method to avoid to high gate oxide field strengths. This is an effort to examine a major ongoing issue in device reliability, and to govern future device design.
Bibliography:Selected peer-reviewed extended papers abstracts of which were presented at the 13th European Conference on Silicon Carbide and Related Materials (ECSCRM 2020-2021), October 24-28, 2021, Tours, France
ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/p-xd84zm