Gate Dielectric Current Transport Mechanisms in N-SiC Metal Oxide Semiconductor Capacitor

• Published in: Materials science forum Vol. 1090; pp. 165 - 169
• Main Authors: Singh, Navab, Chung, Surasit, Voo, Qin Gui Roth, Han, K.M., Chand, Umesh, Bera, Lakshmi Kanta, Chua, Calvin Hung Ming
• Format: Journal Article
• Language: English
• Published: Trans Tech Publications Ltd 31.05.2023
• Subjects: Gate Leakage Current; 4H-SiC MOS Capacitor; Fowler-Nordheim Tunneling; Poole-Frenkel Conduction
• ISSN: 0255-5476; 1662-9752; 1662-9752
• DOI: 10.4028/p-dv215a

In this work, the voltage and temperature behavior of gate leakage current transport in SiC/SiO2 metal oxide semiconductor (MOS) capacitor was investigated. The wide range of gate voltage from-50 to 50V and temperature from 300 to 400 K, respectively uses to study the gate current conduction mechanism. Two dominant gate leakage current transport modes in SiO2 during strong accumulation with the application of positive bias were caused by Fowler–Nordheim (FN) tunneling and Poole-Frenkel (PF) emission leakage conduction. For positively biased case, FN tunneling in the range of 30-40 V dominates the gate leakage current and Poole–Frenkel conduction attributed beyond 40 V.