Transparent Electronics: Thermally Stable Transparent Resistive Random Access Memory based on All-Oxide Heterostructures (Adv. Funct. Mater. 15/2014)

Thermally stable and transparent resistive random access memories (T‐RRAM) are developed by G. Liu, R.‐W. Li, and co‐workers on page 2171. Based on ion migration and formation of metallic conductive filaments in an indium–tin oxide/hafnium oxide/indium–tin oxide sandwich structure, the T‐RRAM device...

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Bibliographic Details
Published inAdvanced functional materials Vol. 24; no. 15; p. 2110
Main Authors Shang, Jie, Liu, Gang, Yang, Huali, Zhu, Xiaojian, Chen, Xinxin, Tan, Hongwei, Hu, Benlin, Pan, Liang, Xue, Wuhong, Li, Run-Wei
Format Journal Article
LanguageEnglish
Published Blackwell Publishing Ltd 01.04.2014
Subjects
all-oxide
hafnium oxide
random access memory
thermally stable
transparent electronics
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Summary:Thermally stable and transparent resistive random access memories (T‐RRAM) are developed by G. Liu, R.‐W. Li, and co‐workers on page 2171. Based on ion migration and formation of metallic conductive filaments in an indium–tin oxide/hafnium oxide/indium–tin oxide sandwich structure, the T‐RRAM device demonstrates great optical transmittance, a robust antithermal shock capability, and stable resistive switching behaviors that are promising for outer‐space applications under extreme working conditions.
Bibliography:istex:3C23F620235C98986BB646141ACD60FDDDDA64E4
ark:/67375/WNG-6QQ5X8MN-R
ArticleID:ADFM201470093
ISSN:1616-301X
1616-3028
DOI:10.1002/adfm.201470093