High density neuromorphic system with Mo/Pr0.7Ca0.3MnO3 synapse and NbO2 IMT oscillator neuron

We report novel nanoscale synapse and neuron devices for ultra-high density neuromorphic system. By adopting a Mo electrode, the redox reaction at Mo/Pr 0.7 Ca 0.3 MnO 3 (PCMO) interface was controlled which in turn significantly improve synapse characteristics such as switching uniformity, disturba...

Full description

Saved in:
Bibliographic Details
Published in2015 IEEE International Electron Devices Meeting (IEDM) pp. 17.6.1 - 17.6.4
Main Authors Moon, Kibong, Cha, Euijun, Park, Jaesung, Gi, Sanggyun, Chu, Myonglae, Baek, Kyungjoon, Lee, Byunggeun, Oh, Sangho, Hwang, Hyunsang
Format Conference Proceeding Journal Article
LanguageEnglish
Published IEEE 01.12.2015
Subjects
Arrays
Data storage
Devices
Electrodes
Meetings
Neuromorphics
Neurons
Oscillators
Resistance
Switches
Synapses
Temperature
Online AccessGet full text

Cover

More Information
Summary:We report novel nanoscale synapse and neuron devices for ultra-high density neuromorphic system. By adopting a Mo electrode, the redox reaction at Mo/Pr 0.7 Ca 0.3 MnO 3 (PCMO) interface was controlled which in turn significantly improve synapse characteristics such as switching uniformity, disturbance, retention and multi-level data storage under identical pulse condition. Furthermore, The NbO 2 based Insulator-Metal Transition (IMT) oscillator was developed for neuron application. Finally, we have experimentally confirmed the realization of pattern recognition with high accuracy using the 11k-bit Mo/PCMO synapse array and NbO 2 oscillator neuron.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Conference-1
ObjectType-Feature-3
content type line 23
SourceType-Conference Papers & Proceedings-2
ISSN:2156-017X
DOI:10.1109/IEDM.2015.7409721