Numerical modeling of p-i-n GaAs solar cell performance
This study aims to improve and evaluate the external quantum efficiency (EQE) of p-i-n GaAs solar cells. The current densities of minority carriers and the geometrical and physical cell parameters were calculated using the finite difference method. As a result, the EQE simulation findings are extrem...
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| Published in | Journal of Ovonic Research Vol. 18; no. 6; pp. 769 - 779 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
30.11.2022
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| Online Access | Get full text |
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| Summary: | This study aims to improve and evaluate the external quantum efficiency (EQE) of p-i-n GaAs solar cells. The current densities of minority carriers and the geometrical and physical cell parameters were calculated using the finite difference method. As a result, the EQE simulation findings are extremely close to the experimental data, and a maximum EQE of 57.26 %, with optimum layer thicknesses (µm) of p, i, and n are respectively 0.2,1,4, and n and p layers doping (cm-3 ) of 1020 cm-3 and 4 × 1017 cm-3 . The adding of p+-AlGaAs window layer increases the energy conversion efficiency (%) from 19.41 to 25.45. |
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| ISSN: | 1584-9953 1584-9953 |
| DOI: | 10.15251/JOR.2022.186.769 |