Impact of Al-, Ni-, TiN-, and Mo-metal gates on MOCVD-grown HfO2 and ZrO2 high-κ dielectrics

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Bibliographic Details
Published inMicroelectronics and reliability Vol. 47; no. 4-5; pp. 536 - 539
Main Authors Abermann, S., Efavi, J., Sjöblom, G., Lemme, M., Olsson, J., Bertagnolli, E.
Format Journal Article
LanguageEnglish
Published 01.04.2007
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ISSN:0026-2714
DOI:10.1016/j.microrel.2007.01.002