Nonvolatile floating gate memory containing AgInSbTe–SiO 2 nanocomposite layer and capping the HfO 2 /SiO 2 composite blocking oxide layer

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Bibliographic Details
Published inNanotechnology Vol. 23; no. 22; p. 225703
Main Authors Chiang, Kuo-Chang, Hsieh, Tsung-Eong
Format Journal Article
LanguageEnglish
Published 08.06.2012
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ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/23/22/225703