Nature of the electron- and gamma-induced radiation effects in power silicon semiconductor devices

Kinetics of the radiation defect formation in silicon power devices irradiated with electrons or gamma quanta is discussed.

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Bibliographic Details
Published inInternational journal of radiation applications and instrumentation. Part C, Radiation physics and chemistry Vol. 28; no. 5; pp. 439 - 440
Main Authors Kojecký, B., Kliský, V., Prášil, Z.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 1986
Subjects
diode
electron irradiation
gamma irradiation
kinetics
physical radiation effects
radiation defects
semiconductor devices
Silicon
thyristor
radiation defects
electron irradiation
thyristor
semiconductor devices
gamma irradiation
diode
Silicon
physical radiation effects
kinetics
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Summary:Kinetics of the radiation defect formation in silicon power devices irradiated with electrons or gamma quanta is discussed.
ISSN:1359-0197
1878-1020
DOI:10.1016/1359-0197(86)90163-3