GROWTH AND INVESTIGATION OF EPITAXIAL GABIAS LAYERS / EPITAKSINIŲ GABIAS SLUOKSNIŲ AUGINIMAS IR SAVYBIŲ TYRIMAS

In this work the influence of technological parameters – Tp substrate temperature and Bi flux – on structural, electrical and optical properties of GaBiAs layers was investigated. Thin Ga-BiAs layers have been grown by molecular beam epitaxy tech-nology on monocrystalline GaAs substrates. The surfac...

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Bibliographic Details
Published inScience future of Lithuania Vol. 3; no. 1; pp. 55 - 58
Main Authors Ruseckas, Andrius, Butkute, Renata, Bertulis, Klemensas, Dapkus, Leonas, Pacebutas, Vaidas
Format Journal Article
LanguageEnglish
Published Vilnius Gediminas Technical University 01.02.2011
Subjects
Diffraction
Epitaxy
GaBiAs
Gallium arsenide
Hall effect
Investigations
MBE
Optical properties
optical transmitance
Physiological aspects
Van der Pauw
X-rays
Europe
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Summary:In this work the influence of technological parameters – Tp substrate temperature and Bi flux – on structural, electrical and optical properties of GaBiAs layers was investigated. Thin Ga-BiAs layers have been grown by molecular beam epitaxy tech-nology on monocrystalline GaAs substrates. The surface mor-phology of GaBiAs layers and formation of Bi droplets were examined using atomic force microscopy. The lattice parameters of GaBiAs and Bi concentration have been evaluated from high resolution X-ray diffraction ∆(2Θ)spektra. Optical measurements showed the reduction of energy band gap from 1.15 to 0.86 eV for GaBiAs layers with 4.4 and 11.3% of Bi concentration. From the Hall effect measurements using Van der Pauw geometry the highest carrier concentration 3.2∙1015 was measured for GaBiAs layers containing 11.3% of Bi.
ISSN:2029-2341
2029-2252
2029-2341
DOI:10.3846/mla.2011.011