APA (7th ed.) Citation

Jung, H. (2011). Analysis of Subthreshold Characteristics for Device Parameter of DGMOSFET Using Gaussian Function. Journal of Information and Communication Convergence Engineering, 9(6), 9(6), 733-737. https://doi.org/10.6109/ijice.2011.9.6.733

Chicago Style (17th ed.) Citation

Jung, Hak-Kee. "Analysis of Subthreshold Characteristics for Device Parameter of DGMOSFET Using Gaussian Function." Journal of Information and Communication Convergence Engineering, 9(6) 9, no. 6 (2011): 733-737. https://doi.org/10.6109/ijice.2011.9.6.733.

MLA (9th ed.) Citation

Jung, Hak-Kee. "Analysis of Subthreshold Characteristics for Device Parameter of DGMOSFET Using Gaussian Function." Journal of Information and Communication Convergence Engineering, 9(6), vol. 9, no. 6, 2011, pp. 733-737, https://doi.org/10.6109/ijice.2011.9.6.733.