Analysis of Subthreshold Characteristics for Device Parameter of DGMOSFET Using Gaussian Function

• Published in: Journal of Information and Communication Convergence Engineering, 9(6) Vol. 9; no. 6; pp. 733 - 737
• Main Author: Jung, Hak-Kee
• Format: Journal Article
• Language: English
• Published: 한국정보통신학회 31.12.2011
• Subjects: 전자/정보통신공학
• ISSN: 2234-8255; 2234-8883
• DOI: 10.6109/ijice.2011.9.6.733

This paper has studied subthreshold characteristics for double gate(DG) MOSFET using Gaussian function in solving Poisson’s equation. Typical two dimensional analytical transport models have been presented for symmetrical Double Gate MOSFETs (DGMOSFETs). Subthreshold swing and threshold voltage are very important factors for digital devices because of determination of ON and OFF. In general, subthreshold swings have to be under 100mV/dec, and threshold voltage roll-off small in short channel devices. These models are used to obtain the change of subthreshold swings and threshold voltage for DGMOSFET according to channel doping profiles. Also subthreshold swings and threshold voltages have been analyzed for device parameters such as channel length, channel thickness and channel doping profiles. KCI Citation Count: 1