A study on low-power, nanosecond operation and multilevel bipolar resistance switching in Ti/ZrO 2 /Pt nonvolatile memory with 1T1R architecture

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Bibliographic Details
Published inSemiconductor science and technology Vol. 27; no. 6; p. 65010
Main Authors Wu, Ming-Chi, Jang, Wen-Yueh, Lin, Chen-Hsi, Tseng, Tseung-Yuen
Format Journal Article
LanguageEnglish
Published 13.06.2012
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/27/6/065010