Impact of strain relaxation on the growth rate of heteroepitaxial germanium tin binary alloy

• Published in: Journal of semiconductors Vol. 45; no. 10; pp. 102101 - 102107
• Main Authors: Jahandar, Pedram, Myronov, Maksym
• Format: Journal Article
• Language: English
• Published: Chinese Institute of Electronics 01.10.2024
• Subjects: chemical vapour deposition; CVD; germanium tin; GeSn; group Ⅳ semiconductor; strain relaxation

Abstract The growth of high-quality germanium tin (Ge 1– y Sn y ) binary alloys on a Si substrate using chemical vapor deposition (CVD) techniques holds immense potential for advancing electronics and optoelectronics applications, including the development of efficient and low-cost mid-infrared dete...