Impact of strain relaxation on the growth rate of heteroepitaxial germanium tin binary alloy

• Published in: Journal of semiconductors Vol. 45; no. 10; pp. 102101 - 102107
• Main Authors: Jahandar, Pedram, Myronov, Maksym
• Format: Journal Article
• Language: English
• Published: Chinese Institute of Electronics 01.10.2024
• Subjects: chemical vapour deposition; CVD; germanium tin; GeSn; group Ⅳ semiconductor; strain relaxation
• ISSN: 1674-4926; 2058-6140
• DOI: 10.1088/1674-4926/24030002

Abstract The growth of high-quality germanium tin (Ge 1– y Sn y ) binary alloys on a Si substrate using chemical vapor deposition (CVD) techniques holds immense potential for advancing electronics and optoelectronics applications, including the development of efficient and low-cost mid-infrared detectors and light sources. However, achieving precise control over the Sn concentration and strain relaxation of the Ge 1– y Sn y epilayer, which directly influence its optical and electrical properties, remain a significant challenge. In this research, the effect of strain relaxation on the growth rate of Ge 1– y Sn y epilayers, with Sn concentration >11at.%, is investigated. It is successfully demonstrated that the growth rate slows down by ~55% due to strain relaxation after passing its critical thickness, which suggests a reduction in the incorporation of Ge into Ge 1– y Sn y growing layers. Despite the increase in Sn concentration as a result of the decrease in the growth rate, it has been found that the Sn incorporation rate into Ge 1– y Sn y growing layers has also decreased due to strain relaxation. Such valuable insights could offer a foundation for the development of innovative growth techniques aimed at achieving high-quality Ge 1– y Sn y epilayers with tuned Sn concentration and strain relaxation.