4-terminal FinFETs with high threshold voltage controllability
For future ultra-low power circuit designs, flexible V/sub th/ control will inevitably be required. To meet this requirement, four-terminal (4-T) DG MOSFETs are promising, thanks to the static and/or dynamic V/sub th/ controllability by one of the double gates. Recently, we demonstrated independent...
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Published in | Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC pp. 207 - 208 vol.1 |
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Main Authors | , , , , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
Piscataway NJ
IEEE
2004
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Abstract | For future ultra-low power circuit designs, flexible V/sub th/ control will inevitably be required. To meet this requirement, four-terminal (4-T) DG MOSFETs are promising, thanks to the static and/or dynamic V/sub th/ controllability by one of the double gates. Recently, we demonstrated independent double gate FinFETs, fabricated by using orientation-dependent wet etching. This method has great advantages in forming precise Si-fins with an atomically flat channel surface. In this paper, we present the successful fabrication of the ultra-thin Si-fins by wet etching, and the fine separated double gates. We show the excellent V/sub th/ controllability of the fabricated 4-T FinFETs by reducing the Si-fin thickness (T/sub Si/) down to 13 nm. We also discuss the T/sub Si/ dependence of the V/sub th/ tunable range on the T/sub Si/. |
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AbstractList | For future ultra-low power circuit designs, flexible V/sub th/ control will inevitably be required. To meet this requirement, four-terminal (4-T) DG MOSFETs are promising, thanks to the static and/or dynamic V/sub th/ controllability by one of the double gates. Recently, we demonstrated independent double gate FinFETs, fabricated by using orientation-dependent wet etching. This method has great advantages in forming precise Si-fins with an atomically flat channel surface. In this paper, we present the successful fabrication of the ultra-thin Si-fins by wet etching, and the fine separated double gates. We show the excellent V/sub th/ controllability of the fabricated 4-T FinFETs by reducing the Si-fin thickness (T/sub Si/) down to 13 nm. We also discuss the T/sub Si/ dependence of the V/sub th/ tunable range on the T/sub Si/. |
Author | Liu, Y.X. Yarnauchi, H. Masahara, A. Suzuki, E. Sekigawa, T. Tsutsurni, T. Ishii, K. Takashirna, H. Sakamoto, K. |
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CitedBy_id | crossref_primary_10_1007_s10825_020_01499_1 crossref_primary_10_1016_j_mejo_2009_01_011 crossref_primary_10_1109_TCSI_2019_2927441 crossref_primary_10_1080_00207217_2017_1279227 crossref_primary_10_1088_1402_4896_ad5061 |
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Keywords | Voltage threshold MOSFET Controllability Dual gate transistor High voltage Self aligned technology |
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Snippet | For future ultra-low power circuit designs, flexible V/sub th/ control will inevitably be required. To meet this requirement, four-terminal (4-T) DG MOSFETs... |
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SubjectTerms | Applied sciences Controllability Electronics Exact sciences and technology Fabrication FinFETs MOSFETs Nanoelectronics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Shape Textile industry Threshold voltage Transistors Voltage control Wet etching |
Title | 4-terminal FinFETs with high threshold voltage controllability |
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