4-terminal FinFETs with high threshold voltage controllability

• Published in: Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC pp. 207 - 208 vol.1
• Main Authors: Liu, Y.X., Masahara, A., Ishii, K., Sekigawa, T., Takashirna, H., Yarnauchi, H., Tsutsurni, T., Sakamoto, K., Suzuki, E.
• Format: Conference Proceeding
• Language: English
• Published: Piscataway NJ IEEE 2004
• Subjects: Applied sciences; Controllability; Electronics; Exact sciences and technology; Fabrication; FinFETs; MOSFETs; Nanoelectronics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Shape; Textile industry; Threshold voltage; Transistors; Voltage control; Wet etching; Voltage threshold; MOSFET; Controllability; Dual gate transistor; High voltage; Self aligned technology
• ISBN: 0780382846; 9780780382848
• ISSN: 1548-3770; 2640-6853
• DOI: 10.1109/DRC.2004.1367867

For future ultra-low power circuit designs, flexible V/sub th/ control will inevitably be required. To meet this requirement, four-terminal (4-T) DG MOSFETs are promising, thanks to the static and/or dynamic V/sub th/ controllability by one of the double gates. Recently, we demonstrated independent double gate FinFETs, fabricated by using orientation-dependent wet etching. This method has great advantages in forming precise Si-fins with an atomically flat channel surface. In this paper, we present the successful fabrication of the ultra-thin Si-fins by wet etching, and the fine separated double gates. We show the excellent V/sub th/ controllability of the fabricated 4-T FinFETs by reducing the Si-fin thickness (T/sub Si/) down to 13 nm. We also discuss the T/sub Si/ dependence of the V/sub th/ tunable range on the T/sub Si/.