Publisher’s Note: “Beryllium doped semi-insulating GaN without surface accumulation for homoepitaxial high power devices” [J. Appl. Phys 127, 215703 (2020)]

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Bibliographic Details
Published inJournal of applied physics Vol. 128; no. 7
Main Authors Ahmad, Habib, Anderson, Travis J., Gallagher, James C., Clinton, Evan A., Engel, Zachary, Matthews, Christopher M., Alan Doolittle, W.
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 21.08.2020
Subjects
Beryllium
Electronic devices
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Bibliography:correction
ISSN:0021-8979
1089-7550
DOI:10.1063/5.0024119