Electron Scattering in Boron Hexogonal Nitride

• Published in: Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki Vol. 20; no. 2; pp. 5 - 12
• Main Authors: Muravyov, V. V., Mishchenka, V. N.
• Format: Journal Article
• Language: English; Russian
• Published: Educational institution «Belarusian State University of Informatics and Radioelectronics 05.04.2022
• Subjects: graphene; hexogonal boron nitride; monte carlo method; scattering intensity; semiconductor structure
• ISSN: 1729-7648; 2708-0382
• DOI: 10.35596/1729-7648-2022-20-2-5-12

Investigation the effects of electron scattering in boron hexogonal nitride (h-BN) was performed. At present, material h-BN, together with graphene, is considered to be one of the most promising materials for the formation of new semiconductor devices with good characteristics for the ranges of ultrahigh and extreme high frequency bands. The main electrophysical parameters and characteristics of h-BN was considered. For this material the three valley K-M-Г band structure has been used. It is noted that the K valley has the smallest energy gap between the conductivity zone and the valence zone. Calculation of relative electron masses and parabolicity coefficients in K, M and G valleys was performed. Formulas that allow to model the main electron scattering intensities in h-BN were presented. The obtained electron scattering intensities as a function of energy and temperature were considered and analyzed. Based on the obtained characteristics, it was possible to implement a statistical multi-particle Monte Carlo method to determine the characteristics of electron transfer in the heterostructure of a semiconductor devices containing layers of hexogonal boron nitride.