AlGaN/GaN HEMT with 200 GHz fmax on sapphire substrate with InGaN back-barrier AlGaN/GaN HEMT with 200 GHz fmax on sapphire substrate with InGaN back-barrier

Saved in:
Bibliographic Details
Published inHong wai yu hao mi bo xue bao Vol. 30; no. 4; pp. 289 - 292
Main Authors LIU, Guo-Guo, WEI, Ke, HUANG, Jun, LIU, Xin-Yu, NIU, Jie-Bin
Format Journal Article
LanguageEnglish
Published 20.03.2012
Online AccessGet full text

Cover

More Information
ISSN:1001-9014
DOI:10.3724/SP.J.1010.2011.00289