Dicing Process for 4H-SiC Wafers by Plasma Etching Using High-Pressure SF6 Plasma with Metal Masks

Since SiC is hard and brittle, dicing by normal grinding process not only requires a long time for processing, but also reduces chip strength due to microcracks. The use of highly efficient and damage-free etching with high-pressure plasma as a chemical processing method for dicing rather than mecha...

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Bibliographic Details
Published inMaterials science forum Vol. 1124; pp. 51 - 55
Main Authors Iden, Shunto, Oshima, Masaaki, Toh, Daisetsu, Sano, Yasuhisa, Nakanishi, Yuma, Yamauchi, Kazuto, Yamada, Jumpei
Format Journal Article
LanguageEnglish
Published Pfaffikon Trans Tech Publications Ltd 21.08.2024
Subjects
Chemical damage
Electric fields
Grooves
High pressure
Microcracks
Plasma etching
Silicon carbide
Dicing
Metal Mask
Plasma Chemical Vaporization Machining
Plasma Etching
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Summary:Since SiC is hard and brittle, dicing by normal grinding process not only requires a long time for processing, but also reduces chip strength due to microcracks. The use of highly efficient and damage-free etching with high-pressure plasma as a chemical processing method for dicing rather than mechanical processing was investigated. The results of groove processing using a combination of a metal mask with slit-like apertures and plasma etching with high-pressure SF6 plasma showed that the processing speed decreased with decreasing slit width and increasing groove depth. The results of electrostatic field calculations suggest that this is due to a decrease in plasma intensity caused by electric field decreasing.
Bibliography:Special topic volume with invited peer-reviewed papers only
ObjectType-Article-1
SourceType-Scholarly Journals-1
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content type line 14
ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/p-vu2Cfb