Exploring metalorganic chemical vapor deposition of Si-alloyed Al 2 O 3 dielectrics using disilane

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Published inJournal of crystal growth Vol. 464; pp. 54 - 58
Main Authors Chan, Silvia H., Keller, Stacia, Koksaldi, Onur S., Gupta, Chirag, DenBaars, Steven P., Mishra, Umesh K.
Format Journal Article
LanguageEnglish
Japanese
Published 01.04.2017
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Author Mishra, Umesh K.
Chan, Silvia H.
Gupta, Chirag
Koksaldi, Onur S.
DenBaars, Steven P.
Keller, Stacia
Author_xml – sequence: 1
  givenname: Silvia H.
  surname: Chan
  fullname: Chan, Silvia H.
– sequence: 2
  givenname: Stacia
  surname: Keller
  fullname: Keller, Stacia
– sequence: 3
  givenname: Onur S.
  surname: Koksaldi
  fullname: Koksaldi, Onur S.
– sequence: 4
  givenname: Chirag
  surname: Gupta
  fullname: Gupta, Chirag
– sequence: 5
  givenname: Steven P.
  surname: DenBaars
  fullname: DenBaars, Steven P.
– sequence: 6
  givenname: Umesh K.
  surname: Mishra
  fullname: Mishra, Umesh K.
BookMark eNo1kMtqwzAURLVIoUnaXyj6AbtXsi3byxDSBwSyaLsWknyVyiiWkdLS_H1tmq5mhoGzOCuyGMKAhDwwyBkw8djnvYmXdIwh59POGcuhFQuyBOA8A142t2SVUg8wvQyWRO9-Rh-iG470hGc11aManKHmE0_OKE-_1Rgi7XAMyZ1dGGiw9M1lyvtwwY5uPOX0QAvaOfRoztGZRL_SzOtccl4NeEdurPIJ76-5Jh9Pu_ftS7Y_PL9uN_vMMCGarGhBV4U1om4bZSpVVgi6bYCD5hWWla1r0WjRGeS8VJypxnZaF6o0oq1tVRZrIv64JoaUIlo5RndS8SIZyNmO7OW_HTnbkYzJyU7xC02hYFg
CitedBy_id crossref_primary_10_1109_LED_2017_2756926
crossref_primary_10_1063_5_0048990
crossref_primary_10_1063_1_5125788
crossref_primary_10_35848_1882_0786_ab93a3
crossref_primary_10_7567_APEX_11_041002
Cites_doi 10.1063/1.1405826
10.1063/1.94621
10.1016/j.jcrysgro.2014.09.029
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ContentType Journal Article
DBID AAYXX
CITATION
DOI 10.1016/j.jcrysgro.2016.11.096
DatabaseName CrossRef
DatabaseTitle CrossRef
DeliveryMethod fulltext_linktorsrc
Discipline Engineering
Chemistry
EndPage 58
ExternalDocumentID 10_1016_j_jcrysgro_2016_11_096
GroupedDBID --K
--M
-~X
.~1
0R~
1B1
1RT
1~.
1~5
29K
4.4
457
4G.
53G
5GY
5VS
7-5
71M
8P~
9JN
AABNK
AACTN
AAEDT
AAEDW
AAIKJ
AAKOC
AALRI
AAOAW
AAQFI
AAQXK
AAXKI
AAXUO
AAYXX
ABFNM
ABJNI
ABMAC
ABNEU
ABXDB
ACDAQ
ACFVG
ACGFS
ACIWK
ACNNM
ACRLP
ADBBV
ADEZE
ADIYS
ADMUD
ADVLN
AEBSH
AEKER
AENEX
AFFNX
AFJKZ
AFKWA
AFTJW
AGHFR
AGUBO
AGYEJ
AHHHB
AI.
AIEXJ
AIKHN
AITUG
AIVDX
AJOXV
AKRWK
ALMA_UNASSIGNED_HOLDINGS
AMFUW
AMRAJ
ASPBG
AVWKF
AXJTR
AZFZN
BBWZM
BKOJK
BLXMC
CITATION
CS3
D-I
DU5
EBS
EFJIC
EJD
EO8
EO9
EP2
EP3
F5P
FDB
FEDTE
FGOYB
FIRID
FNPLU
FYGXN
G-2
G-Q
GBLVA
HMV
HVGLF
HZ~
IHE
J1W
KOM
M24
M38
M41
MO0
N9A
NDZJH
O-L
O9-
OAUVE
OGIMB
OZT
P-8
P-9
P2P
PC.
Q38
R2-
RIG
RNS
ROL
RPZ
SDF
SDG
SDP
SES
SEW
SMS
SPC
SPCBC
SPD
SPG
SSQ
SSZ
T5K
TN5
VH1
WUQ
XPP
ZMT
~02
~G-
ID FETCH-LOGICAL-c1668-390b53fc6798ac5a45e0b98020b25e45f7768b6dce224a21a8fdbb3a4c697f543
ISSN 0022-0248
IngestDate Thu Sep 26 17:24:02 EDT 2024
IsPeerReviewed true
IsScholarly true
Language English
Japanese
LinkModel OpenURL
MergedId FETCHMERGED-LOGICAL-c1668-390b53fc6798ac5a45e0b98020b25e45f7768b6dce224a21a8fdbb3a4c697f543
PageCount 5
ParticipantIDs crossref_primary_10_1016_j_jcrysgro_2016_11_096
PublicationCentury 2000
PublicationDate 2017-04-00
PublicationDateYYYYMMDD 2017-04-01
PublicationDate_xml – month: 04
  year: 2017
  text: 2017-04-00
PublicationDecade 2010
PublicationTitle Journal of crystal growth
PublicationYear 2017
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SSID ssj0001610
Score 2.1388032
SourceID crossref
SourceType Aggregation Database
StartPage 54
Title Exploring metalorganic chemical vapor deposition of Si-alloyed Al 2 O 3 dielectrics using disilane
Volume 464
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1Jb9NAFB6FcgAOFRQQS0Fz4GbZ2LM49jGKWiKQyIFW6s2azeA0JFUSVyoHDvxy3oy3EQREuViRFY8yeZ_e5u99g9CbRFMuiaJhZhIKBYpMwgziSChImROhxywXjm3xMZ2ds_cX_GI0-uGxluqdjNS3vXMl_2NVuAd2tVOyt7BsvyjcgM9gX7iCheH6TzYeCHRfje3CuLlKFahOBOBaQHZtya4tM8tNqFShfdd-A4nmZBmQYB7QQFfNaThWsbl2zQNdbStLg_1D7qo2N1s7RfkZivhd31C2kwqum1otrysRzKLBm3cDh5DbqqqPBB_Wl1ux1I5QMF_Vm-BT_8i7-qrJa6dfqk3bcGybExDwBk7LMCxgZdN8h8tS5rnMRkO6Db6NjPtvbr3pMCyihd0ebM1S8tLIqq_me3S0f4lvPeuwI7Qtim6dwq4DRVAB69xBdwk4K-slo-8DTQgy4rhTnLcb8abM9_8eL8HxMpWzh-iwNROeNHh5hEZmdYTuTbuT_Y7QA0-E8jGSPYqwjyLcoQg7FOEBRXhd4gFFeLLEBM8xxR6KsEMR7lD0BJ2fnpxNZ2F78kaokjTNQprHktNS2Vd0QnHBuIllnkFpIQk3jJdjqFJlqpWBDFCQRGSllpIKptJ8XHJGn6KD1XplniFsNKOacMWhbmUpfCuzq8Y5G3OVcRI_R2-7v6u4agRWir8b6sWtn3iJ7g_gPEYHu01tXkEuuZOvnbF_Ar1Idpg
link.rule.ids 315,783,787,27936,27937
linkProvider Elsevier
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Exploring+metalorganic+chemical+vapor+deposition+of+Si-alloyed+Al+2+O+3+dielectrics+using+disilane&rft.jtitle=Journal+of+crystal+growth&rft.au=Chan%2C+Silvia+H.&rft.au=Keller%2C+Stacia&rft.au=Koksaldi%2C+Onur+S.&rft.au=Gupta%2C+Chirag&rft.date=2017-04-01&rft.issn=0022-0248&rft.volume=464&rft.spage=54&rft.epage=58&rft_id=info:doi/10.1016%2Fj.jcrysgro.2016.11.096&rft.externalDBID=n%2Fa&rft.externalDocID=10_1016_j_jcrysgro_2016_11_096
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0022-0248&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0022-0248&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0022-0248&client=summon