Characteristics of n-GaN After Cl 2 /Ar and Cl 2 /N 2 Inductively Coupled Plasma Etching
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Published in | Japanese Journal of Applied Physics Vol. 42; no. Part 1, No. 10; pp. 6409 - 6412 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
01.10.2003
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Online Access | Get full text |
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ISSN: | 0021-4922 1347-4065 |
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DOI: | 10.1143/JJAP.42.6409 |