Characteristics of n-GaN After Cl 2 /Ar and Cl 2 /N 2 Inductively Coupled Plasma Etching

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 42; no. Part 1, No. 10; pp. 6409 - 6412
Main Authors Han, Yan-Jun, Xue, Song, Guo, Wen-Ping, Sun, Chang-Zheng, Hao, Zhi-Biao, Luo, Yi
Format Journal Article
LanguageEnglish
Published 01.10.2003
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ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.42.6409