Highly Vt tunable and low variability triangular fin-channel MOSFETs on SOTB

• Published in: Microelectronic engineering Vol. 147; pp. 290 - 293
• Main Authors: Liu, Y.X., Matsukawa, T., Endo, K., O’uchi, S., Tsukada, J., Yamauchi, H., Ishikawa, Y., Mizubayashi, W., Morita, Y., Migita, S., Ota, H., Masahara, M.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.11.2015
• Subjects: Body effect factor; FinFET; SOTB; Threshold voltage (Vt); Triangular fin; Triangular fin; Threshold voltage (Vt); Body effect factor; SOTB; FinFET
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2015.04.075

[Display omitted] •Triangular fin channel double-gate MOSFETs were fabricated on SOTB.•A high threshold voltage shift was obtained in triangular fin devices.•A smaller variability was confirmed in triangular fin devices by wet etching.•Uniform line edges of a triangular fin were formed by wet etching.•A damage-free BOX layer was obtained by the orientation dependent wet etching. Triangular fin (Tri-Fin) channel double-gate (DG) MOSFETs were successfully fabricated on (100) SOTB wafers using orientation dependent wet etching, and their electrical characteristics were systematically compared to the rectangular fin (Rec-Fin) ones by RIE. Thanks to the wide bottom area and the suppressed line edge roughness of Tri-Fins by the wet process, a higher threshold voltage (Vt) tunability and a smaller Vt variation were obtained as compared to the Rec-Fin ones. Moreover, the wet processed Tri-Fin devices provide a damage-free BOX layer, which is useful for the fabrication of multiple Vt devices with an ultrathin BOX layer.