Resistive switching phenomena: a probe for the tracing of secondary phase in manganite

In this report, we have claimed the new application of resistive switching phenomena, as a probe for the tracing of the secondary phase in the La 0.7 Sr 0.3 MnO 3 (LSMO)–La 2 O 3 composite samples. The XRD pattern of the LSMO–La 2 O 3 composites is not able to detect the presence of La 2 O 3 for x =...

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Bibliographic Details
Published inApplied physics. A, Materials science & processing Vol. 128; no. 5
Main Authors Kumari, Karuna, Ray, S. J., Thakur, Ajay D.
Format Journal Article
LanguageEnglish
Published Berlin/Heidelberg Springer Berlin Heidelberg 2022
Springer Nature B.V
Subjects
Applied physics
Characterization and Evaluation of Materials
Condensed Matter Physics
Current voltage characteristics
Electrical resistivity
Electrons
Grain boundaries
Machines
Magnons
Manufacturing
Materials science
Nanotechnology
Optical and Electronic Materials
Physics
Physics and Astronomy
Processes
Surfaces and Interfaces
Switching
Thin Films
Tracing
Transport properties
Grain boundaries
Secondary phase
Small polaron hoppinng (SPH) mechanism
Metal insulator transition temperature
Resistive switching
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Summary:In this report, we have claimed the new application of resistive switching phenomena, as a probe for the tracing of the secondary phase in the La 0.7 Sr 0.3 MnO 3 (LSMO)–La 2 O 3 composite samples. The XRD pattern of the LSMO–La 2 O 3 composites is not able to detect the presence of La 2 O 3 for x = 0.005 and 0.010 sample. The I – V characteristics of the x = 0.005 and 0.010 sample exhibit the bipolar resistive switching behavior and a further increase in the concentration of La 2 O 3 leads to a loss in the hysteresis. Apart from this, we have also investigated the transport properties of the composite samples. The decrease in the T MI and increase in the resistivity value with the increasing concentration of the x is observed due to the presence of high resistive grain boundaries near the LSMO grains. The resistivity of the samples at T < T MI is well explained by the contribution of grain boundaries effect, electron–electron contribution, and electron–magnon scattering. The resistivity at higher temperature T > T MI is explained by the small polaron hopping (SPH) mechanism.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-022-05553-6