Electrical and Structural Real-Time Changes in Thin Thermoelectric (Bi0.15Sb0.85)2Te3 Films by Dynamic Thermal Treatment

A recent trend in thermoelectrics is miniaturization of generators or Peltier coolers using the broad spectrum of thin-film and nanotechnologies. Power supplies for energy self-sufficient micro and sensor systems are a wide application field for such generators. It is well known that thermal treatme...

Full description

Saved in:
Bibliographic Details
Published inJournal of electronic materials Vol. 39; no. 9; pp. 1408 - 1412
Main Authors Rothe, K., Stordeur, M., Heyroth, F., Syrowatka, F., Leipner, H. S.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Boston Springer US 01.09.2010
Springer
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:A recent trend in thermoelectrics is miniaturization of generators or Peltier coolers using the broad spectrum of thin-film and nanotechnologies. Power supplies for energy self-sufficient micro and sensor systems are a wide application field for such generators. It is well known that thermal treatment of as-deposited p -type (Bi 0.15 Sb 0.85 ) 2 Te 3 films leads to enhancement of their power factors. Whereas up to now only the start (as-deposited) and the end (after annealing) film stages were investigated, herein for the first time, the dynamical changes of sputter-deposited film properties have been observed by real-time measurements. The electrical conductivity shows a distinct, irreversible increase during a thermal cycle of heating to about 320°C followed by cooling to room temperature. The interpretation of the Seebeck and Hall coefficients points to an enhancement in Hall mobility after annealing. In situ x-ray diffractometry shows the generation of an additional Te phase depending on temperature. This is also confirmed by energy-dispersive x-ray microanalysis and the corresponding mapping by scanning electron microscopy. It is presumed that the Te enrichment in a separate, locally well-defined phase is the reason for the improvement in the integral film transport properties.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-010-1325-y