Electrical and Structural Real-Time Changes in Thin Thermoelectric (Bi0.15Sb0.85)2Te3 Films by Dynamic Thermal Treatment
A recent trend in thermoelectrics is miniaturization of generators or Peltier coolers using the broad spectrum of thin-film and nanotechnologies. Power supplies for energy self-sufficient micro and sensor systems are a wide application field for such generators. It is well known that thermal treatme...
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Published in | Journal of electronic materials Vol. 39; no. 9; pp. 1408 - 1412 |
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Main Authors | , , , , |
Format | Journal Article Conference Proceeding |
Language | English |
Published |
Boston
Springer US
01.09.2010
Springer |
Subjects | |
Online Access | Get full text |
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Summary: | A recent trend in thermoelectrics is miniaturization of generators or Peltier coolers using the broad spectrum of thin-film and nanotechnologies. Power supplies for energy self-sufficient micro and sensor systems are a wide application field for such generators. It is well known that thermal treatment of as-deposited
p
-type (Bi
0.15
Sb
0.85
)
2
Te
3
films leads to enhancement of their power factors. Whereas up to now only the start (as-deposited) and the end (after annealing) film stages were investigated, herein for the first time, the dynamical changes of sputter-deposited film properties have been observed by real-time measurements. The electrical conductivity shows a distinct, irreversible increase during a thermal cycle of heating to about 320°C followed by cooling to room temperature. The interpretation of the Seebeck and Hall coefficients points to an enhancement in Hall mobility after annealing.
In situ
x-ray diffractometry shows the generation of an additional Te phase depending on temperature. This is also confirmed by energy-dispersive x-ray microanalysis and the corresponding mapping by scanning electron microscopy. It is presumed that the Te enrichment in a separate, locally well-defined phase is the reason for the improvement in the integral film transport properties. |
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ISSN: | 0361-5235 1543-186X |
DOI: | 10.1007/s11664-010-1325-y |