Characteristics of PVD SiCN for Application in Hybrid Cu Bonding

To enhance the density and performance of semiconductor devices, 3D packaging with hybrid Cu bonding is emerging as a critical technology. One of the dielectrics used in hybrid Cu bonding is SiCN, typically deposited using PECVD (plasma-enhanced chemical vapor deposition). In this study, we investig...

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Published inJournal of semiconductor technology and science Vol. 25; no. 1; pp. 102 - 108
Main Authors Choi, Junyoung, Jang, Suin, Lee, Dongmyeong, Kang, Sukkyung, Kim, Sanha, Kim, Eunkyung
Format Journal Article
LanguageEnglish
Published 대한전자공학회 01.02.2025
Subjects
전기공학
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Summary:To enhance the density and performance of semiconductor devices, 3D packaging with hybrid Cu bonding is emerging as a critical technology. One of the dielectrics used in hybrid Cu bonding is SiCN, typically deposited using PECVD (plasma-enhanced chemical vapor deposition). In this study, we investigated SiCN deposited at room temperature using PVD (physical vapor deposition). The SiCN, with a thickness of 150 nm, exhibited a surface roughness of 0.3-0.4 nm after the CMP (chemical mechanical polishing) process and a contact angle of about 10 degrees and dielectric constant of 3.9, indicating its potential as a dielectric for hybrid Cu bonding. And, PVD SiCN-SiCN bonding was performed at 260◦C, resulting in a uniform and void-free interface. KCI Citation Count: 0
ISSN:2233-4866
1598-1657
1598-1657
2233-4866
DOI:10.5573/JSTS.2025.25.1.102