Plasmon–phonon gain in CdHgTe structures with near-surface HgTe quantum wells

Abstract The work is devoted to the study of plasmon–phonon gain in CdHgTe/HgTe structures with quantum wells (QWs) located near the boundary of the structure with vacuum/air (near-surface QWs). The issue of the influence of the distance between QWs on the plasmon–phonon gain has been studied. It ha...

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Bibliographic Details
Published inJournal of optics (2010) Vol. 26; no. 10; pp. 105002 - 105012
Main Authors Ya Aleshkin, V, Rudakov, A O, Dubinov, A A, Morozov, S V
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.10.2024
Subjects
gain
plasmon–phonon
quantum well
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Summary:Abstract The work is devoted to the study of plasmon–phonon gain in CdHgTe/HgTe structures with quantum wells (QWs) located near the boundary of the structure with vacuum/air (near-surface QWs). The issue of the influence of the distance between QWs on the plasmon–phonon gain has been studied. It has been shown that a decrease in the distance from the nearest QW to the structure boundary leads to an increase in the phase velocity of the generated plasmon–phonon and a decrease in the power absorbed by phonons in the barriers. This leads to a decrease in the threshold concentration of nonequilibrium carriers required to begin of plasmon–phonon gain under conditions of optical excitation.
Bibliography:JOPT-111123.R1
ISSN:2040-8978
2040-8986
DOI:10.1088/2040-8986/ad6e9c