Optimizing photocurrent intensity in layered SiGe heterostructures

Abstract We study the dependence of photo-spectral intensity on tri- and multilayers of SiO 2 /[SiGe [ d SiGe ]/SiO 2 ] N with repetitions N = 1 to 10 and thicknesses d SiGe = 5 –100 nm. Photocurrent analysis reveals a bimodal spectral feature. A comparison of the photocurrent analysis between tri-...

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Bibliographic Details
Published inSemiconductor science and technology Vol. 39; no. 10; pp. 105007 - 105016
Main Authors Sultan, M T, Ciurea, M L, Stavarache, I, Thórarinsdóttir, K A, Arnalds, U B, Teodorescu, V, Manolescu, A, Ingvarsson, S, Svavarsson, H G
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.10.2024
Subjects
nanoparticles
photocurrent
Raman spectroscopy
SiGe
strain
transmission electron microscopy
x-ray diffraction
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Summary:Abstract We study the dependence of photo-spectral intensity on tri- and multilayers of SiO 2 /[SiGe [ d SiGe ]/SiO 2 ] N with repetitions N = 1 to 10 and thicknesses d SiGe = 5 –100 nm. Photocurrent analysis reveals a bimodal spectral feature. A comparison of the photocurrent analysis between tri- and multilayers shows that in the multilayer structures, the photo-spectral intensity increases with increasing repetition N . The change in intensity could then be further tuned by changing the thickness of the SiGe layers d SiGe . We attribute the change in intensity to an increase in tensile strain, along with increased Ge atomic concentration and reduced SiGe-nano cluster size.
Bibliography:SST-110086.R1
ISSN:0268-1242
1361-6641
DOI:10.1088/1361-6641/ad70d4