Phase structures and electrical properties of LiSbO3 doped 0.994K0.5Na0.5NbO3–0.004K5.4Cu1.3Ta10O29–0.002BiMnO3 piezoelectric ceramics

• Published in: Journal of materials science. Materials in electronics Vol. 24; no. 1; pp. 331 - 335
• Main Authors: Hu, Yaobin, Liu, Xinyu, Jiang, Minhong, Zhang, Xiaowen
• Format: Journal Article
• Language: English
• Published: Boston Springer US 2013; Springer
• Subjects: Acoustic wave devices, piezoelectric and piezoresistive devices; Applied sciences; Characterization and Evaluation of Materials; Chemistry and Materials Science; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Dielectric, piezoelectric, ferroelectric and antiferroelectric materials; Dielectrics, piezoelectrics, and ferroelectrics and their properties; Electronics; Exact sciences and technology; Materials; Materials Science; Optical and Electronic Materials; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; LiTaO3; Piezoelectric Property; Polymorphic Phase Transition; Lead Zirconium Titanate; Potassium Niobate; Grain size; Grain size analysis; Material processing; Piezoelectric sensor; Electrical properties; Doping; Doped materials; High temperature; Piezoelectric ceramics; Piezoelectric device; Dissipation; Lead free ceramics; Lead free material; Electrical characteristic
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-012-0750-5

LiSbO 3 (LS) doped 0.994K 0.5 Na 0.5 NbO 3 –0.004K 5.4 Cu 1.3 Ta 10 O 29 –0.002BiMnO 3 (KNN–KCT–BM) piezoelectric ceramics with excellent properties have been fabricated by conventional ceramic processing. It is found that the dopant of LS has considerable effect on the grain size, phase structure and electrical properties of KNN–KCT–BM ceramics. The KNN–KCT–BM ceramics doped with 4.5 mol% LS ceramics show good electrical properties such as d 33  = 208 pC/N, Q m  = 95, k p  = 40.5 %, T c  = 335 °C, T o−t  = 55 °C, ε r  = 1,190 and rather low dielectric dissipation of tan δ  = 1.25 % (1 kHz) and tan δ  < 1 % (100 kHz). This indicates that 4.5 mol% LS-doped KNN–KCT–BM piezoceramic is an alternative lead-free piezoelectric material for the development of piezoelectric devices working at high temperature.